Samsung M378B5673EH1-CF8 2GB vs Kingston KHX3200C20S4/16GX 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 20% 更低的延时

Kingston KHX3200C20S4/16GX 16GB

需要考虑的原因
Kingston KHX3200C20S4/16GX 16GB

报告一个错误

更快的读取速度，GB/s

17.2 12.7

测试中的平均数值
更快的写入速度，GB/s

15.8 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston KHX3200C20S4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 35
读取速度，GB/s

12.7 17.2
写入速度，GB/s

7.5 15.8
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1988 3415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMW64GX4M8C3200C16 8GB

Corsair CMW64GX4M8C3200C16 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CMK8GX4M1D2666C16 8GB

Corsair CMK8GX4M1D2666C16 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CMN16GX4M2Z3200C16 8GB

Corsair CMN16GX4M2Z3200C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C16-8GSXKB 8GB

G Skill Intl F4-3200C16-8GSXKB 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Transcend Information JM2666HSB-16G 16GB

Transcend Information JM2666HSB-16G 16GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Kingston CBD24D4S7S8MB-8 8GB

Kingston CBD24D4S7S8MB-8 8GB