Samsung M378B5673EH1-CF8 2GB vs Kingston KHX4133C19D4/8GX 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston KHX4133C19D4/8GX 8GB

Kingston KHX4133C19D4/8GX 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Kingston KHX4133C19D4/8GX 8GB

需要考虑的原因
Kingston KHX4133C19D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 -22% 更低的延时
更快的读取速度，GB/s

19.7 12.7

测试中的平均数值
更快的写入速度，GB/s

18.2 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston KHX4133C19D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 23
读取速度，GB/s

12.7 19.7
写入速度，GB/s

7.5 18.2
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 4001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA82GR7JJR8N-VK 16GB

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G Skill Intl F4-3200C16-16GVS 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Samsung M378B5673EH1-CF8 2GB

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SK Hynix DDR2 800 2G 2GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMK16GX4M2Z3600C18 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

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Samsung M471A1G44AB0-CWE 8GB

G Skill Intl F4-3333C16-8GVK 8GB

G Skill Intl F4-3333C16-8GVK 8GB