Samsung M378B5673EH1-CF8 2GB vs Kingston KM0VW4-MID 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston KM0VW4-MID 8GB

Kingston KM0VW4-MID 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 26% 更低的延时

Kingston KM0VW4-MID 8GB

需要考虑的原因
Kingston KM0VW4-MID 8GB

报告一个错误

更快的读取速度，GB/s

14.7 12.7

测试中的平均数值
更快的写入速度，GB/s

10.6 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston KM0VW4-MID 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 38
读取速度，GB/s

12.7 14.7
写入速度，GB/s

7.5 10.6
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMD64GX4M8B2800C14 8GB

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Kingston ACR32D4U2S8ME-16 16GB

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Crucial Technology CT8G4SFRA266.M8FJ 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Patriot Memory (PDP Systems) 4000 C20 Series 8GB

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Panram International Corporation PUD42400C168GVS 8GB

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Crucial Technology CT8G4SFS8213.M8FA 8GB

Crucial Technology CT8G4SFS8213.M8FA 8GB