Samsung M378B5673EH1-CF8 2GB vs Micron Technology 16ATF2G64AZ-3G2E1 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时

Micron Technology 16ATF2G64AZ-3G2E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-3G2E1 16GB

报告一个错误

更快的读取速度，GB/s

18.6 12.7

测试中的平均数值
更快的写入速度，GB/s

15.3 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

12.7 18.6
写入速度，GB/s

7.5 15.3
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1988 3372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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