Samsung M378B5673EH1-CF8 2GB vs Samsung M471A2K43CB1-CTD 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 20% 更低的延时

Samsung M471A2K43CB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB

报告一个错误

更快的读取速度，GB/s

15.5 12.7

测试中的平均数值
更快的写入速度，GB/s

11.3 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Samsung M471A2K43CB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 35
读取速度，GB/s

12.7 15.5
写入速度，GB/s

7.5 11.3
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 2848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMZ16GX3M2A2400C10 8GB

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V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

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Kingston KP223C-ELD 2GB

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Crucial Technology CT16G4DFD8213.M16FB 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology BL16G30C15U4WL.M16FE 16GB

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Kingston KHX3200C20S4/32GX 32GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

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Kingston 9905471-001.A01LF 2GB

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Samsung M393A1G40DB0-CPB 8GB

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A-DATA Technology 11137401 8GB

A-DATA Technology 11137401 8GB

Samsung M471B5273CH0-CH9 4GB

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Samsung M471B5273DM0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB