Samsung M378B5673EH1-CF8 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 71

左右 61% 更低的延时

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

报告一个错误

更快的读取速度，GB/s

14.5 12.7

测试中的平均数值
更快的写入速度，GB/s

8.0 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 71
读取速度，GB/s

12.7 14.5
写入速度，GB/s

7.5 8.0
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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Samsung M471B1G73QH0-YK0 8GB

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Golden Empire CL16-16-16 D4-3200 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston ACR512X64D3S13C9G 4GB

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Wilk Elektronik S.A. GX2133D464L15S/8G 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMW32GX4M2A2666C16 16GB

Corsair CMW32GX4M2A2666C16 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

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Corsair CMK32GX4M4K4133C19 8GB

AMD R5316G1609U2K 8GB

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