Samsung M378B5673EH1-CF8 2GB vs SK Hynix HMA82GS6CJR8N-UH 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

SK Hynix HMA82GS6CJR8N-UH 16GB

SK Hynix HMA82GS6CJR8N-UH 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 81

左右 65% 更低的延时
更快的写入速度，GB/s

7.5 6.5

测试中的平均数值

SK Hynix HMA82GS6CJR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA82GS6CJR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 81
读取速度，GB/s

12.7 12.7
写入速度，GB/s

7.5 6.5
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GS6CJR8N-UH 16GB

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Corsair CMV4GX3M1B1600C11 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Kingston 99U5474-028.A00LF 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

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Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

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G Skill Intl F4-3333C16-8GTZ 8GB

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Samsung M393B1G70BH0-CK0 8GB

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB