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Samsung M378B5673FH0-CH9 2GB
A-DATA Technology DDR4 2400 2OZ 8GB

Samsung M378B5673FH0-CH9 2GB vs A-DATA Technology DDR4 2400 2OZ 8GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
A-DATA Technology DDR4 2400 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 2400 2OZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 35
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 34
  • 读取速度，GB/s
    14.4 left arrow 15.8
  • 写入速度，GB/s
    9.5 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2917

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

A-DATA Technology DDR4 2400 2OZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378T5663QZ3-CF7 2GB
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Corsair CMK64GX4M4K3733C17 16GB
内存RAM
Corsair CMX8GX3M2B1600C9 4GB
Corsair CMX8GX3M2B1600C9 4GB
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 99U5700-028.A00G 8GB
Kingston 99U5700-028.A00G 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Kingston KHX3000C15D4/4GX 4GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
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Ramaxel Technology RMSA3320ME88HBF-3200 16GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
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Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Essencore Limited KD4AGU880-32A160T 16GB
Essencore Limited KD4AGU880-32A160T 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
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Protocol Engines Kingrock 800 2GB 2GB
G Skill Intl F4-2800C15-8GTXG 8GB
G Skill Intl F4-2800C15-8GTXG 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
内存RAM