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Samsung M378B5673FH0-CH9 2GB
Corsair CMD32GX4M2C3200C14T 16GB

Samsung M378B5673FH0-CH9 2GB vs Corsair CMD32GX4M2C3200C14T 16GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
Corsair CMD32GX4M2C3200C14T 16GB 需要考虑的原因
Corsair CMD32GX4M2C3200C14T 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 35
    左右 -75% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Corsair CMD32GX4M2C3200C14T 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 20
  • 读取速度，GB/s
    14.4 left arrow 18.4
  • 写入速度，GB/s
    9.5 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 3426

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Corsair CMD32GX4M2C3200C14T 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMD32GX4M2C3200C14T 16GB
Corsair CMD32GX4M2C3200C14T 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix HMA41GR7MFR4N-TF 8GB
SK Hynix HMA41GR7MFR4N-TF 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM
Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-025.A00LF 4GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Kingston 9965669-008.A03G 16GB
Kingston 9965669-008.A03G 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung V-GeN D4S16GL32A8TS 16GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Samsung M393A2K40CB2-CTD 16GB
Samsung M393A2K40CB2-CTD 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK8GX4M1Z3600C18 8GB
Corsair CMK8GX4M1Z3600C18 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM