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Samsung M378B5673FH0-CH9 2GB
Crucial Technology BL4G24C16U4B.8FB 4GB

Samsung M378B5673FH0-CH9 2GB vs Crucial Technology BL4G24C16U4B.8FB 4GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology BL4G24C16U4B.8FB 4GB

Crucial Technology BL4G24C16U4B.8FB 4GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
Crucial Technology BL4G24C16U4B.8FB 4GB 需要考虑的原因
Crucial Technology BL4G24C16U4B.8FB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 35
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BL4G24C16U4B.8FB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 29
  • 读取速度，GB/s
    14.4 left arrow 16.5
  • 写入速度，GB/s
    9.5 left arrow 13.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2983

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Crucial Technology BL4G24C16U4B.8FB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CM4X8GF2133C15S2 8GB
Corsair CM4X8GF2133C15S2 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMT64GX4M8C3200C16 8GB
Corsair CMT64GX4M8C3200C16 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK16GX4M2D2400C14 8GB
Corsair CMK16GX4M2D2400C14 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMR16GX4M2A2666C16 8GB
Corsair CMR16GX4M2A2666C16 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9905702-002.A00G 8GB
Kingston 9905702-002.A00G 8GB
内存RAM