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Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
比较
Samsung M378B5673FH0-CH9 2GB vs Crucial Technology BLS8G4D26BFSBK.8FD 8GB
总分
Samsung M378B5673FH0-CH9 2GB
总分
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
需要考虑的原因
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
35
左右 -25% 更低的延时
更快的读取速度,GB/s
17.6
14.4
测试中的平均数值
更快的写入速度,GB/s
13.5
9.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
28
读取速度,GB/s
14.4
17.6
写入速度,GB/s
9.5
13.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2321
3336
Samsung M378B5673FH0-CH9 2GB RAM的比较
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD8GX4M2B3600C18 4GB
Kingston 99U5403-468.A00LF 8GB
Corsair CMW64GX4M4A2666C16 16GB
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4400C17-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CB8GU2666.C8ET 8GB
Corsair CMV4GX3M1B1600C11 4GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M4A2800C16 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2666C18-4GRS 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited IM4AGU88N26-GIIHMB 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905625-139.A00G 16GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
报告一个错误
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Bug description
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