RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Samsung M378B5673FH0-CH9 2GB vs Crucial Technology BLT8G4D26AFTA.16FBD 8GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
Crucial Technology BLT8G4D26AFTA.16FBD 8GB 需要考虑的原因
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 28
  • 读取速度，GB/s
    14.4 left arrow 17.8
  • 写入速度，GB/s
    9.5 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 3258

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Corsair CMU16GX4M2A2666C16 8GB
Corsair CMU16GX4M2A2666C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M393A2G40DBD-CP1???? 16GB
Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905701-003.A00G 16GB
Kingston 9905701-003.A00G 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-4000C17-8GTRS 8GB
G Skill Intl F4-4000C17-8GTRS 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905622-075.A00G 8GB
Kingston 9905622-075.A00G 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston ACR32D4S2S8ME-16 16GB
Kingston ACR32D4S2S8ME-16 16GB
内存RAM