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Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
比较
Samsung M378B5673FH0-CH9 2GB vs Crucial Technology CT16G4DFRA32A.C8FE 16GB
总分
Samsung M378B5673FH0-CH9 2GB
总分
Crucial Technology CT16G4DFRA32A.C8FE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4DFRA32A.C8FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
35
左右 -21% 更低的延时
更快的读取速度,GB/s
17.2
14.4
测试中的平均数值
更快的写入速度,GB/s
13.9
9.5
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
29
读取速度,GB/s
14.4
17.2
写入速度,GB/s
9.5
13.9
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2321
3503
Samsung M378B5673FH0-CH9 2GB RAM的比较
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-4000C14-16GTZR 16GB
Mushkin 99[2/7/4]192F 4GB
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Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Samsung M393B1K70CH0-YH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
G Skill Intl F3-1866C8-8GTX 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
报告一个错误
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Bug description
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