Samsung M378B5673FH0-CH9 2GB vs Crucial Technology CT8G4SFRA32A.M8FJ 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA32A.M8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 35

左右 -9% 更低的延时
更快的读取速度，GB/s

16.6 14.4

测试中的平均数值
更快的写入速度，GB/s

13.4 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 32
读取速度，GB/s

14.4 16.6
写入速度，GB/s

9.5 13.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2321 2955

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

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Transcend Information TS2GLH64V6B 16GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

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Kingston 9965525-144.A00LF 8GB

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SK Hynix HMA84GR7JJR4N-VK 32GB

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A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB