Samsung M378B5673FH0-CH9 2GB vs G Skill Intl F4-3200C15-16GVK 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

G Skill Intl F4-3200C15-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 35

左右 -3% 更低的延时
更快的读取速度，GB/s

14.9 14.4

测试中的平均数值
更快的写入速度，GB/s

12.6 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3200C15-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 34
读取速度，GB/s

14.4 14.9
写入速度，GB/s

9.5 12.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 3206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Asgard VMA42UG-MEC1U2AW1 8GB

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G Skill Intl F4-3200C15-16GVK 16GB

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Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-2666C15-16GVK 16GB

G Skill Intl F4-2666C15-16GVK 16GB

SK Hynix HMT41GU7BFR8A-PB 8GB

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G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB