Samsung M378B5673FH0-CH9 2GB vs G Skill Intl F4-3200C16-4GVRB 4GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

G Skill Intl F4-3200C16-4GVRB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GVRB 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

18.5 14.4

测试中的平均数值
更快的写入速度，GB/s

13.7 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3200C16-4GVRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

14.4 18.5
写入速度，GB/s

9.5 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 3061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-4GVRB 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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SpecTek Incorporated PSD34G13332 4GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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Corsair CMT16GX4M2K3600C16 8GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

A-DATA Technology DQKD1A08 1GB

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Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

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Micron Technology 16ATF2G64HZ-2G3B1 16GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB