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Samsung M378B5673FH0-CH9 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB

Samsung M378B5673FH0-CH9 2GB vs InnoDisk Corporation M4S0-8GSSOCIK 8GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 更快的写入速度，GB/s
    9.5 left arrow 8.7
    测试中的平均数值
InnoDisk Corporation M4S0-8GSSOCIK 8GB 需要考虑的原因
InnoDisk Corporation M4S0-8GSSOCIK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 35
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 14.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 24
  • 读取速度，GB/s
    14.4 left arrow 15.9
  • 写入速度，GB/s
    9.5 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2326

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB RAM的比较

SpecTek Incorporated ?????????????????? 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP32D4U2S8MR-8 8GB
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内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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Golden Empire CL16-16-16 D4-2800 8GB
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Mushkin 99[2/7/4]190F 4GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
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AMD AE34G1601U1 4GB
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Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
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G Skill Intl F4-3200C16-4GRB 4GB
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Apacer Technology 78.01G86.9H50C 1GB
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Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
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内存RAM
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AMD R7S48G2400U2S 8GB
内存RAM
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Kingston KF552C40-16 16GB
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Corsair CMSX32GX4M2A2400C16 16GB
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