Samsung M378B5673FH0-CH9 2GB vs Kingston 9905624-045.A00G 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Kingston 9905624-045.A00G 8GB

Kingston 9905624-045.A00G 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 93

左右 62% 更低的延时
更快的写入速度，GB/s

9.5 8.3

测试中的平均数值

Kingston 9905624-045.A00G 8GB

需要考虑的原因
Kingston 9905624-045.A00G 8GB

报告一个错误

更快的读取速度，GB/s

15.5 14.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Kingston 9905624-045.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 93
读取速度，GB/s

14.4 15.5
写入速度，GB/s

9.5 8.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 1670

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5143EB0-CPB 4GB

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A-DATA Technology DQVE1908 512MB

G Skill Intl F4-4000C17-16GVKB 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CM4X4GF3000C15K4 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMK16GX4M2B4266C19 8GB

Corsair CMK16GX4M2B4266C19 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3000C16-8GRS 8GB

G Skill Intl F4-3000C16-8GRS 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston CBD26D4S9S8ME-8 8GB

Kingston CBD26D4S9S8ME-8 8GB