Samsung M378B5673FH0-CH9 2GB vs Maxsun MSD48G32Q3 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 94

左右 63% 更低的延时
更快的读取速度，GB/s

14.4 13.5

测试中的平均数值

Maxsun MSD48G32Q3 8GB

需要考虑的原因
Maxsun MSD48G32Q3 8GB

报告一个错误

更快的写入速度，GB/s

11.3 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Maxsun MSD48G32Q3 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 94
读取速度，GB/s

14.4 13.5
写入速度，GB/s

9.5 11.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 2771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Corsair CMK64GX4M4B2800C14 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F4-2800C15-8GRBB 8GB

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Transcend Information TS1GLH64V4H 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905471-076.A00LF 8GB

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Kingston 9905624-033.A00G 8GB

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Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMD32GX4M4C3200C16 8GB

Corsair CMD32GX4M4C3200C16 8GB