Samsung M378B5673FH0-CH9 2GB vs Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 39

左右 10% 更低的延时

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

需要考虑的原因
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

报告一个错误

更快的读取速度，GB/s

14.8 14.4

测试中的平均数值
更快的写入速度，GB/s

12.3 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 39
读取速度，GB/s

14.4 14.8
写入速度，GB/s

9.5 12.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2321 2188

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston K531R8-MIN 4GB

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Micron Technology 18ADF1G72PZ-2G1A1 8GB

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Kingston MSI24D4S7S8S8-8 8GB

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Kingston 99U5403-050.A00LF 4GB

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Corsair CMH32GX4M2Z3600C18 16GB

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Qimonda 72T128420EFA3SB2 1GB

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Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

Samsung M378B5673EH1-CF8 2GB

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Corsair CMT16GX4M2C3000C15 8GB

Corsair CMT16GX4M2C3000C15 8GB