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Samsung M378B5773CH0-CH9 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Samsung M378B5773CH0-CH9 2GB vs Wilk Elektronik S.A. GR3200D464L22/16G 16GB

总分
star star star star star
Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分
star star star star star
Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB

差异 规格 评论

差异

Samsung M378B5773CH0-CH9 2GB 需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
Wilk Elektronik S.A. GR3200D464L22/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 39
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773CH0-CH9 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 34
  • 读取速度，GB/s
    12.8 left arrow 20.5
  • 写入速度，GB/s
    7.4 left arrow 16.4
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1770 left arrow 3616

Samsung M378B5773CH0-CH9 2GB RAM的比较

Kingston 99U5458-001.A00LF 2GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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Micron Technology 16ATF2G64AZ-2G1A1 16GB
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