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Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB

Samsung M386B4G70DM0-CMA4 32GB vs Crucial Technology CT16G4DFD8266.C16FD1 16GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Crucial Technology CT16G4DFD8266.C16FD1 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FD1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 52
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 34
  • 读取速度，GB/s
    9.7 left arrow 16.2
  • 写入速度，GB/s
    7.2 left arrow 12.4
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 3135

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Patriot Memory (PDP Systems) 4000 C16 Series 8GB
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内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
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Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
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Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
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内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3600C16-32GVK 32GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
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G Skill Intl F4-4000C18-32GVK 32GB
内存RAM
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Kingston 9965525-018.A00LF 4GB
Kingston XJ69DF-MIE 8GB
Kingston XJ69DF-MIE 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
Apacer Technology 78.01G86.9H50C 1GB
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Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
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Panram International Corporation PUD42400C154GNJW 4GB
内存RAM