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Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F3-2400C11-4GSR 4GB

Samsung M386B4G70DM0-CMA4 32GB vs G Skill Intl F3-2400C11-4GSR 4GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
G Skill Intl F3-2400C11-4GSR 4GB

G Skill Intl F3-2400C11-4GSR 4GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
  • 更高的内存带宽，mbps
    14900 left arrow 12800
    左右 1.16% 更高的带宽
G Skill Intl F3-2400C11-4GSR 4GB 需要考虑的原因
G Skill Intl F3-2400C11-4GSR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 52
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 7.2
    测试中的平均数值

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F3-2400C11-4GSR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    52 left arrow 31
  • 读取速度，GB/s
    9.7 left arrow 17.0
  • 写入速度，GB/s
    7.2 left arrow 11.6
  • 内存带宽，mbps
    14900 left arrow 12800
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 2865

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

G Skill Intl F3-2400C11-4GSR 4GB RAM的比较

G Skill Intl F3-14900CL8-4GBXM 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F3-2400C11-4GSR 4GB
G Skill Intl F3-2400C11-4GSR 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Kingston 99U5584-009.A00LF 4GB
Kingston 99U5584-009.A00LF 4GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Golden Empire CL7-7-7 2GB
Golden Empire CL7-7-7 2GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Corsair CMW16GX4M1Z3200C16 16GB
Corsair CMW16GX4M1Z3200C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905744-067.A00G 32GB
Kingston 9905744-067.A00G 32GB
内存RAM