Samsung M386B4G70DM0-CMA4 32GB vs G Skill Intl F4-2666C15-16GVR 16GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

G Skill Intl F4-2666C15-16GVR 16GB

G Skill Intl F4-2666C15-16GVR 16GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

G Skill Intl F4-2666C15-16GVR 16GB

需要考虑的原因
G Skill Intl F4-2666C15-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 52

左右 -73% 更低的延时
更快的读取速度，GB/s

16.8 9.7

测试中的平均数值
更快的写入速度，GB/s

13.4 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-2666C15-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 30
读取速度，GB/s

9.7 16.8
写入速度，GB/s

7.2 13.4
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2173 3386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8KTF51264HZ-1G6E1 4GB

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Ramaxel Technology RMT1970ED48E8F1066 2GB

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Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

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Samsung M393B5170FH0-CK0 4GB

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SK Hynix HYMP125S64CP8-S6 2GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB