Samsung M386B4G70DM0-CMA4 32GB vs G Skill Intl F4-3600C18-8GTZN 8GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

G Skill Intl F4-3600C18-8GTZN 8GB

G Skill Intl F4-3600C18-8GTZN 8GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

G Skill Intl F4-3600C18-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3600C18-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 52

左右 -68% 更低的延时
更快的读取速度，GB/s

18 9.7

测试中的平均数值
更快的写入速度，GB/s

15.3 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3600C18-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 31
读取速度，GB/s

9.7 18.0
写入速度，GB/s

7.2 15.3
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2173 3545

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

Corsair CMK32GX4M2E3200C16 16GB

Corsair CMK32GX4M2E3200C16 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Corsair CMU32GX4M2C3333C16 16GB

Corsair CMU32GX4M2C3333C16 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Corsair CMT128GX4M4C3200C16 32GB

Corsair CMT128GX4M4C3200C16 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2666C15S4/16G 16GB

Kingston KHX2666C15S4/16G 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

SK Hynix HMA82GU6DJR8N-XN 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB