Samsung M386B4G70DM0-CMA4 32GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Samsung M386B4G70DM0-CMA4 32GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 52

左右 -100% 更低的延时
更快的读取速度，GB/s

18.1 9.7

测试中的平均数值
更快的写入速度，GB/s

13.7 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 26
读取速度，GB/s

9.7 18.1
写入速度，GB/s

7.2 13.7
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2173 3061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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