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Samsung M386B4G70DM0-CMA4 32GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Samsung M386B4G70DM0-CMA4 32GB vs Patriot Memory (PDP Systems) 3733 C17 Series 8GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Patriot Memory (PDP Systems) 3733 C17 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 52
    左右 -93% 更低的延时
  • 更快的读取速度，GB/s
    19.8 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 27
  • 读取速度，GB/s
    9.7 left arrow 19.8
  • 写入速度，GB/s
    7.2 left arrow 16.6
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 3684

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-4266C17-16GTRGB 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston HP37D4U1S8ME-8X 8GB
Kingston HP37D4U1S8ME-8X 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F4-3600C17-4GVK 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Nanya Technology M2F2G64CB88G7N-CG 2GB
Nanya Technology M2F2G64CB88G7N-CG 2GB
Nanya Technology M2F2G64CB88G7N-CG 2GB
Nanya Technology M2F2G64CB88G7N-CG 2GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2800C15-8GRBB 8GB
G Skill Intl F4-2800C15-8GRBB 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMU16GX4M2A2400C16 8GB
Corsair CMU16GX4M2A2400C16 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK64GX4M4B3600C18 16GB
Corsair CMK64GX4M4B3600C18 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CB8GU2400.C8JT 8GB
Crucial Technology CB8GU2400.C8JT 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Vasekey M378A1K43BB2-CPB 8GB
Vasekey M378A1K43BB2-CPB 8GB
内存RAM