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Samsung M386B4G70DM0-CMA4 32GB
Samsung M378A5244CB0-CRC 4GB

Samsung M386B4G70DM0-CMA4 32GB vs Samsung M378A5244CB0-CRC 4GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Samsung M378A5244CB0-CRC 4GB 需要考虑的原因
Samsung M378A5244CB0-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 52
    左右 -44% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14900
    左右 1.29 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Samsung M378A5244CB0-CRC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 36
  • 读取速度，GB/s
    9.7 left arrow 15.0
  • 写入速度，GB/s
    7.2 left arrow 10.6
  • 内存带宽，mbps
    14900 left arrow 19200
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 2247

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Samsung M378A5244CB0-CRC 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J642GU42J9266NF 16GB
Avant Technology J642GU42J9266NF 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2133C15-4GFX 4GB
G Skill Intl F4-2133C15-4GFX 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2400C16-8GFT 8GB
G Skill Intl F4-2400C16-8GFT 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C18-16GRS 16GB
G Skill Intl F4-3200C18-16GRS 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X16GE2400C14K4 16GB
Corsair CM4X16GE2400C14K4 16GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Essencore Limited KD48GU880-26N160T 8GB
Essencore Limited KD48GU880-26N160T 8GB
内存RAM
Kingston 99U5471-049.A00LF 8GB
Kingston 99U5471-049.A00LF 8GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM