Samsung M386B4G70DM0-CMA4 32GB vs Shenzhen Technology Co Ltd 8GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Shenzhen Technology Co Ltd 8GB

需要考虑的原因
Shenzhen Technology Co Ltd 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 52

左右 -63% 更低的延时
更快的读取速度，GB/s

15.9 9.7

测试中的平均数值
更快的写入速度，GB/s

11.9 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Shenzhen Technology Co Ltd 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 32
读取速度，GB/s

9.7 15.9
写入速度，GB/s

7.2 11.9
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2173 2831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMR32GX4M2C3000C16 16GB

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SK Hynix HYMP112S64CP6-S6 1GB

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G Skill Intl F4-3600C19-8GTZRB 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Corsair CML8GX3M2A1600C9 4GB

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Corsair CMK8GX4M2B4200C19 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Jinyu CL16-16-16 D4-2400 8GB

Jinyu CL16-16-16 D4-2400 8GB