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Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273DH0-CH9 4GB
比较
Samsung M391B5273CH0-CH9 4GB vs Samsung M391B5273DH0-CH9 4GB
总分
Samsung M391B5273CH0-CH9 4GB
总分
Samsung M391B5273DH0-CH9 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5273CH0-CH9 4GB
报告一个错误
需要考虑的原因
Samsung M391B5273DH0-CH9 4GB
报告一个错误
更快的写入速度,GB/s
8.5
8.4
测试中的平均数值
规格
完整的技术规格清单
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273DH0-CH9 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
27
27
读取速度,GB/s
13.4
13.4
写入速度,GB/s
8.4
8.5
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
2275
2055
Samsung M391B5273CH0-CH9 4GB RAM的比较
Corsair CMR32GX4M2C3333C16 16GB
Samsung M391B5273DH0-CH9 4GB RAM的比较
Kingston 9965525-018.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GU6MFR8N-TF 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4400C17-16GVK 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3600C19-8GSXF 8GB
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Kingston 39P5429-006.AO01 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
Samsung M471A5244CB0-CWE 4GB
Corsair CM4X8GE2666C16K8 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL16-16-16 D4-2800 8GB
Corsair CM2X1024-6400C4 1GB
Apacer Technology 78.D1GS7.B7B0B 16GB
Kingston 99U5428-018.A00LF 8GB
Corsair CMR32GX4M4C3000C16 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMSX32GX4M2A2933C19 16GB
Mushkin 991586 2GB
G Skill Intl F4-2666C15-4GVK 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
MDT Technologies GmbH MDT 1GB DDR2-66 1GB
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Bug description
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