Samsung M391B5673FH0-CH9 2GB vs Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 28

左右 -33% 更低的延时
更快的读取速度，GB/s

17.7 13.3

测试中的平均数值
更快的写入速度，GB/s

13.6 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 21
读取速度，GB/s

13.3 17.7
写入速度，GB/s

8.5 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2213 2822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology 8ATF2G64AZ-3G2E1 16GB

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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

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Samsung M391B5673FH0-CH9 2GB

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Kingston 9905712-016.A00G 16GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F4-3600C14-8GVKA 8GB