Samsung M391B5673FH0-CH9 2GB vs G Skill Intl F4-3300C16-8GTZ 8GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

G Skill Intl F4-3300C16-8GTZ 8GB

G Skill Intl F4-3300C16-8GTZ 8GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

G Skill Intl F4-3300C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3300C16-8GTZ 8GB

报告一个错误

更快的读取速度，GB/s

13.6 13.3

测试中的平均数值
更快的写入速度，GB/s

11.4 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

G Skill Intl F4-3300C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

13.3 13.6
写入速度，GB/s

8.5 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2213 3001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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G Skill Intl F4-2800C16-4GRR 4GB

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Kingston 9905403-444.A00LF 4GB

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Kingston XWM8G1-MIE 32GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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SK Hynix HMA451R7AFR8N-UH 4GB

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Kingston HP26D4S9S1ME-4 4GB

G Skill Intl F4-3000C16-8GVSB 8GB

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

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G Skill Intl F4-3600C14-16GVK 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB