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Samsung M391B5673FH0-CH9 2GB
Kingston HP26D4U6S8ME-8X 8GB

Samsung M391B5673FH0-CH9 2GB vs Kingston HP26D4U6S8ME-8X 8GB

总分
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分
star star star star star
Kingston HP26D4U6S8ME-8X 8GB

Kingston HP26D4U6S8ME-8X 8GB

差异 规格 评论

差异

Samsung M391B5673FH0-CH9 2GB 需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
Kingston HP26D4U6S8ME-8X 8GB 需要考虑的原因
Kingston HP26D4U6S8ME-8X 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
Kingston HP26D4U6S8ME-8X 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 25
  • 读取速度，GB/s
    13.3 left arrow 17.6
  • 写入速度，GB/s
    8.5 left arrow 14.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2213 left arrow 3297

Samsung M391B5673FH0-CH9 2GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

Kingston HP26D4U6S8ME-8X 8GB RAM的比较

Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Crucial Technology CT4G4DFS8213.C8FAR 4GB
内存RAM
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内存RAM
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A-DATA Technology DQKD1A08 1GB
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内存RAM
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内存RAM
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Corsair VS1GB800D2 1GB
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Corsair CM4X16GE2400Z16K4 16GB
内存RAM