Samsung M391B5673FH0-CH9 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 28

左右 -56% 更低的延时
更快的读取速度，GB/s

20.5 13.3

测试中的平均数值
更快的写入速度，GB/s

16.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 18
读取速度，GB/s

13.3 20.5
写入速度，GB/s

8.5 16.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2213 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4SFS6266.M4FB 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingston HP698651-154-MCN 8GB

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A-DATA Technology AO2P24HC8T1-BTBS 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CM4X8GE2400C16K4 8GB

Corsair CM4X8GE2400C16K4 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT8G4SFS8266.C8FE 8GB

Crucial Technology CT8G4SFS8266.C8FE 8GB