Samsung M391B5673FH0-CH9 2GB vs SK Hynix HMAA4GS6AJR8N-XN 32GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

SK Hynix HMAA4GS6AJR8N-XN 32GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 33% 更低的延时

SK Hynix HMAA4GS6AJR8N-XN 32GB

需要考虑的原因
SK Hynix HMAA4GS6AJR8N-XN 32GB

报告一个错误

更快的读取速度，GB/s

15.7 13.3

测试中的平均数值
更快的写入速度，GB/s

13.0 8.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 42
读取速度，GB/s

13.3 15.7
写入速度，GB/s

8.5 13.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2213 3033

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Maxsun MSD48G30Q3 8GB

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Samsung M378A1K43CB2-CTD 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Crucial Technology CT8G4DFD8213.C16FBD2 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

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G Skill Intl F4-3200C22-32GRS 32GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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Kingston ACR256X64D3S1333C9 2GB

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V-Color Technology Inc. TD416G26D819-VC 16GB