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Samsung M393A1G40DB0-CPB 8GB
A-DATA Technology AO2P24HCST2-BW8S 16GB

Samsung M393A1G40DB0-CPB 8GB vs A-DATA Technology AO2P24HCST2-BW8S 16GB

总分
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分
star star star star star
A-DATA Technology AO2P24HCST2-BW8S 16GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

差异 规格 评论

差异

Samsung M393A1G40DB0-CPB 8GB 需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 81
    左右 40% 更低的延时
  • 更快的写入速度，GB/s
    8.7 left arrow 7.0
    测试中的平均数值
A-DATA Technology AO2P24HCST2-BW8S 16GB 需要考虑的原因
A-DATA Technology AO2P24HCST2-BW8S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 81
  • 读取速度，GB/s
    10.9 left arrow 14.0
  • 写入速度，GB/s
    8.7 left arrow 7.0
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2427 left arrow 1634

Samsung M393A1G40DB0-CPB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

A-DATA Technology AO2P24HCST2-BW8S 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung 1600 CL10 Series 8GB
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内存RAM
Samsung M393A1G40DB0-CPB 8GB
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A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
Samsung M471B5273EB0-CK0 4GB
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Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
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内存RAM
Kingston KHX2400C11D3/8GX 8GB
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A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
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内存RAM
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Elpida EBJ21UE8BDF0-DJ-F 2GB
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Patriot Memory (PDP Systems) PSD432G32002 32GB
内存RAM
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内存RAM
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内存RAM
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Samsung M378B5773DH0-CH9 2GB
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Micron Technology 9ASF51272AZ-2G3B1 4GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
Essencore Limited KD44GU480-26N160T 4GB
Essencore Limited KD44GU480-26N160T 4GB
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