Samsung M393A1G40DB0-CPB 8GB vs Asgard VMA41UG-MEC1U2AW1 8GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 71

左右 31% 更低的延时
更快的写入速度，GB/s

8.7 7.7

测试中的平均数值

Asgard VMA41UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA41UG-MEC1U2AW1 8GB

报告一个错误

更快的读取速度，GB/s

14.8 10.9

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 71
读取速度，GB/s

10.9 14.8
写入速度，GB/s

8.7 7.7
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2427 1866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 99U5723-002.A00G 8GB

Kingston 99U5723-002.A00G 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Corsair CM4X16GE2666C18S2 16GB

Corsair CM4X16GE2666C18S2 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Kingston 9965643-002.A01G 4GB

Kingston 9965643-002.A01G 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Team Group Inc. Team-Elite-2133 4GB

Team Group Inc. Team-Elite-2133 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9905700-024.A00G 8GB

Kingston 9905700-024.A00G 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston 9905701-021.A00G 16GB

Kingston 9905701-021.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

G Skill Intl F4-3333C16-16GTZSK 16GB

G Skill Intl F4-3333C16-16GTZSK 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix HMA82GU6AFR8N-UH 16GB

SK Hynix HMA82GU6AFR8N-UH 16GB