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Samsung M393A1G40DB0-CPB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Samsung M393A1G40DB0-CPB 8GB vs Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

总分
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

差异 规格 评论

差异

Samsung M393A1G40DB0-CPB 8GB 需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.7 left arrow 8.5
    测试中的平均数值
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 49
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    12.1 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 32
  • 读取速度，GB/s
    10.9 left arrow 12.1
  • 写入速度，GB/s
    8.7 left arrow 8.5
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2427 left arrow 2478

Samsung M393A1G40DB0-CPB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB RAM的比较

Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905403-134.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Transcend Information JM2666HLB-16G 16GB
Transcend Information JM2666HLB-16G 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK32GX4M1A2666C16 32GB
Corsair CMK32GX4M1A2666C16 32GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-2400C17-8GSXK 8GB
G Skill Intl F4-2400C17-8GSXK 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F4-3200C15-16GTZ 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CMK32GX4M2D3200C16 16GB
Corsair CMK32GX4M2D3200C16 16GB
内存RAM