Samsung M393A1G40DB0-CPB 8GB vs Corsair CM4X16GC3000C15K4 16GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

Corsair CM4X16GC3000C15K4 16GB

Corsair CM4X16GC3000C15K4 16GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

Corsair CM4X16GC3000C15K4 16GB

需要考虑的原因
Corsair CM4X16GC3000C15K4 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 49

左右 -75% 更低的延时
更快的读取速度，GB/s

18.2 10.9

测试中的平均数值
更快的写入速度，GB/s

14.6 8.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

Corsair CM4X16GC3000C15K4 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 28
读取速度，GB/s

10.9 18.2
写入速度，GB/s

8.7 14.6
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2427 3633

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston 99U5428-063.A00LF 8GB

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Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Peak Electronics 256X64M-67E 2GB

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Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Corsair CMK32GX4M2Z4000C18 16GB

Corsair CMK32GX4M2Z4000C18 16GB