Samsung M393A1G40DB0-CPB 8GB vs Corsair CMD16GX4M2C3333C16 8GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

Corsair CMD16GX4M2C3333C16 8GB

Corsair CMD16GX4M2C3333C16 8GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

Corsair CMD16GX4M2C3333C16 8GB

需要考虑的原因
Corsair CMD16GX4M2C3333C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更快的读取速度，GB/s

17.7 10.9

测试中的平均数值
更快的写入速度，GB/s

13.8 8.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

Corsair CMD16GX4M2C3333C16 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

10.9 17.7
写入速度，GB/s

8.7 13.8
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2427 3117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-2133C15-16GVR 16GB

G Skill Intl F4-2133C15-16GVR 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

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Kingston KHX4266C19D4/8GX 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB