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Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-2133C15-16GFXR 16GB

Samsung M393A1G40DB0-CPB 8GB vs G Skill Intl F4-2133C15-16GFXR 16GB

总分
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分
star star star star star
G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB

差异 规格 评论

差异

Samsung M393A1G40DB0-CPB 8GB 需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
G Skill Intl F4-2133C15-16GFXR 16GB 需要考虑的原因
G Skill Intl F4-2133C15-16GFXR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 49
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.7
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-2133C15-16GFXR 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 32
  • 读取速度，GB/s
    10.9 left arrow 18.3
  • 写入速度，GB/s
    8.7 left arrow 12.7
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2427 left arrow 2858

Samsung M393A1G40DB0-CPB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-2133C15-16GFXR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Apacer Technology 78.C1GQB.4032B 8GB
Apacer Technology 78.C1GQB.4032B 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Avant Technology W6451U67J7240NB 4GB
Avant Technology W6451U67J7240NB 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Crucial Technology BL16G26C16U4R.16FE 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMW64GX4M4E3200C16 16GB
Corsair CMW64GX4M4E3200C16 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMK32GX4M4A2800C16 8GB
Corsair CMK32GX4M4A2800C16 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3000C16-16GTRG 16GB
G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMR32GX4M4C3000C15 8GB
Corsair CMR32GX4M4C3000C15 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 99U5663-007.A00G 16GB
Kingston 99U5663-007.A00G 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3200C16-4GVRB 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
内存RAM