Samsung M393A1G40DB0-CPB 8GB vs G Skill Intl F4-2400C17-4GFX 4GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 73

左右 33% 更低的延时
更快的写入速度，GB/s

8.7 7.0

测试中的平均数值

G Skill Intl F4-2400C17-4GFX 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GFX 4GB

报告一个错误

更快的读取速度，GB/s

13.4 10.9

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-2400C17-4GFX 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 73
读取速度，GB/s

10.9 13.4
写入速度，GB/s

8.7 7.0
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2427 1468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston ACR256X64D3S1333C9 2GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

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SK Hynix HMT451U7BFR8C-RD 4GB

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology C 8GB

Crucial Technology C 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N