Samsung M393A1G40DB0-CPB 8GB vs G Skill Intl F4-2666C16-4GRB 4GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

G Skill Intl F4-2666C16-4GRB 4GB

需要考虑的原因
G Skill Intl F4-2666C16-4GRB 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 49

左右 -29% 更低的延时
更快的读取速度，GB/s

12.9 10.9

测试中的平均数值
更快的写入速度，GB/s

10.1 8.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-2666C16-4GRB 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 38
读取速度，GB/s

10.9 12.9
写入速度，GB/s

8.7 10.1
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2427 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX1600C9S3L/4G 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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A-DATA Technology DQVE1908 512MB

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Crucial Technology CT8G4SFS824A.C8FP 8GB

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Kingston 9905744-076.A00G 16GB

Kingston 9905744-076.A00G 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

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Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Strontium EVMT8G1600U86S 8GB

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G Skill Intl F4-2400C15-16GFXR 16GB

G Skill Intl F4-2400C15-16GFXR 16GB

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Samsung M471B5273CH0-CH9 4GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB