Samsung M393A1G40DB0-CPB 8GB vs G Skill Intl F4-3600C19-16GSXKB 16GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-3600C19-16GSXKB 16GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

G Skill Intl F4-3600C19-16GSXKB 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GSXKB 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 49

左右 -63% 更低的延时
更快的读取速度，GB/s

18.2 10.9

测试中的平均数值
更快的写入速度，GB/s

15.0 8.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-3600C19-16GSXKB 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 30
读取速度，GB/s

10.9 18.2
写入速度，GB/s

8.7 15.0
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2427 3580

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Crucial Technology CB8GS2400.C8D 8GB

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Elpida EBJ40UG8BBU0-GN-F 4GB

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Crucial Technology BLS16G4S26BFSD.16FBD 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB