Samsung M393A1G40DB0-CPB 8GB vs OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

需要考虑的原因
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

报告一个错误

低于PassMark测试中的延时，ns

39 49

左右 -26% 更低的延时
更快的读取速度，GB/s

15.1 10.9

测试中的平均数值
更快的写入速度，GB/s

12.6 8.7

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 39
读取速度，GB/s

10.9 15.1
写入速度，GB/s

8.7 12.6
内存带宽，mbps

17000 25600

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2427 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM1U16BC4P2-B19H 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Kingston 99U5474-037.A00LF 4GB

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Teikon TMA81GS6AFR8N-UHSC 8GB

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A-DATA Technology AD73I1B1672EG 2GB

Samsung M391A1K43BB1-CRC 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB