Samsung M393A2G40DB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Samsung M393A2G40DB1-CRC 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

总分

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

差异规格评论

差异

Samsung M393A2G40DB1-CRC 16GB

需要考虑的原因
Samsung M393A2G40DB1-CRC 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 81

左右 -125% 更低的延时
更快的读取速度，GB/s

9.1 8.5

测试中的平均数值
更快的写入速度，GB/s

7.9 5.6

测试中的平均数值

规格

完整的技术规格清单

Samsung M393A2G40DB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

81 36
读取速度，GB/s

8.5 9.1
写入速度，GB/s

5.6 7.9
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1651 2090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IM48GU88A30-FGGHMB 8GB

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AMD R5316G1609U2K 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

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A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

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Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Samsung M471B5773DH0-CH9 2GB

Corsair CMT64GX4M8C3200C16 8GB

Corsair CMT64GX4M8C3200C16 8GB