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Samsung M393B1G70BH0-YK0 8GB
A-DATA Technology DDR4 4133 8GB

Samsung M393B1G70BH0-YK0 8GB vs A-DATA Technology DDR4 4133 8GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
A-DATA Technology DDR4 4133 8GB

A-DATA Technology DDR4 4133 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
A-DATA Technology DDR4 4133 8GB 需要考虑的原因
A-DATA Technology DDR4 4133 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 49
    左右 -75% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
A-DATA Technology DDR4 4133 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 28
  • 读取速度，GB/s
    10.2 left arrow 18.6
  • 写入速度，GB/s
    8.1 left arrow 15.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 3741

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

A-DATA Technology DDR4 4133 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Corsair CMT16GX4M2C3200C16 8GB
Corsair CMT16GX4M2C3200C16 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMK64GX4M4C3000C16 16GB
Corsair CMK64GX4M4C3000C16 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMT32GX4M4C3000C15 8GB
Corsair CMT32GX4M4C3000C15 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905625-029.A00G 8GB
Kingston 9905625-029.A00G 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMW16GX4M2C3000C15 8GB
Corsair CMW16GX4M2C3000C15 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Corsair CMU32GX4M2C3000C15 16GB
Corsair CMU32GX4M2C3000C15 16GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KHX2933C17S4/16G 16GB
Kingston KHX2933C17S4/16G 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Corsair CMT32GX4M2K4000C19 16GB
Corsair CMT32GX4M2K4000C19 16GB
内存RAM