Samsung M393B1G70BH0-YK0 8GB vs Corsair CMD16GX4M2B3466C16 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Corsair CMD16GX4M2B3466C16 8GB

需要考虑的原因
Corsair CMD16GX4M2B3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 49

左右 -172% 更低的延时
更快的读取速度，GB/s

20.8 10.2

测试中的平均数值
更快的写入速度，GB/s

16.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Corsair CMD16GX4M2B3466C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 18
读取速度，GB/s

10.2 20.8
写入速度，GB/s

8.1 16.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 3650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMK32GX4M4Z3200C16 8GB

Corsair CMK32GX4M4Z3200C16 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK64GX4M8Z2933C16 8GB

Corsair CMK64GX4M8Z2933C16 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Crucial Technology CT8G4SFS832A.C8FE 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

Infineon (Siemens) 64T32000HU3.7A 256MB

Infineon (Siemens) 64T32000HU3.7A 256MB

A-DATA Technology DDR3 1866 8GB

A-DATA Technology DDR3 1866 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Avant Technology J642GU42J2320NQ 16GB

Avant Technology J642GU42J2320NQ 16GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N