Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology BLS4G4D240FSC.M8FADG 4GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSC.M8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 49

左右 -63% 更低的延时
更快的读取速度，GB/s

16.7 10.2

测试中的平均数值
更快的写入速度，GB/s

12.7 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 30
读取速度，GB/s

10.2 16.7
写入速度，GB/s

8.1 12.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 3127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Netac Technology Co Ltd E40832A 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M392B2G70DM0-YH9 16GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Corsair CMK128GX4M8X3600C18 16GB

Corsair CMK128GX4M8X3600C18 16GB