Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology CT16G4DFD8266.C16FD1 16GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Crucial Technology CT16G4DFD8266.C16FD1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更快的读取速度，GB/s

16.2 10.2

测试中的平均数值
更快的写入速度，GB/s

12.4 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

10.2 16.2
写入速度，GB/s

8.1 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 3135

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMT32GX4M2Z3600C18 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Kingston 99U5469-045.A00LF 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3200C16-16GVKA 16GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Team Group Inc. DDR4 3000 4GB

Team Group Inc. DDR4 3000 4GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

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Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

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Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB